UT4446L-S08-R datasheet(3/9 Pages) VBSEMI

Il numero della parte	UT4446L-S08-R

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Produttore elettronici	VBSEMI [VBsemi Electronics Co.,Ltd]

Homepage	www.VBsemi.com

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

246

VGS =10thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.000

0.002

0.004

0.006

0.008

0.010

10203040

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

VDS = 24 V

ID = 11 A

VDS =15 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

300

600

900

1200

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

VGS =4.5 V

VGS =10 V

ID = 11 A

TJ -Junction Temperature (°C)

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UT4446L-S08-R

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