2SC4420 datasheet(1/3 Pages) PANASONIC

Il numero della parte	2SC4420

Spiegazioni elettronici	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

PDF	3 Pages

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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1

Power Transistors

2SC4420

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

900

800

7

5

3

1

70

3

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 900V, IE = 0

VEB = 7V, IC = 0

IC = 10mA, IB = 0

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 0.8A

IC = 0.8A, IB = 0.16A

VCE = 5V, IC = 0.15A, f = 1MHz

IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,

VCC = 250V

min

800

8

6

typ

10

max

50

1.5

0.7

2.5

0.3

Unit

µA

V

MHz

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3 Full Pack Package(a)

15.0

±0.3

5.0

±0.2

11.0

±0.2

10.9

±0.5

5.45

±0.3

3

2

1

1.1

±0.1

2.0

±0.2

0.6

±0.2

2.0

±0.1

φ3.2±0.1

3.2

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