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UD4606G-S08-R Scheda tecnica(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Il numero della parte UD4606G-S08-R
Spiegazioni elettronici  N- and P-Channel 30 V (D-S) MOSFET
PDF  14 Pages
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Produttore elettronici  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UD4606G-S08-R Scheda tecnica(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
N-Channel
VDD = 20 V, RL = 3.7 Ω
ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω
P-Channel
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
N-Ch
4
8
ns
P-Ch
10
16
Rise Time
tr
N-Ch
10
17
P-Ch
9
1
5
Turn-Off Delay Time
td(off)
N-Ch
16
2
2
P-Ch
23
26
Fall Time
tf
N-Ch
5
9
P-Ch
1
0
16
Turn-On Delay Time
td(on)
N-Channel
VDD = 20 V, RL = 3.7 Ω
ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
1
0
16
P-Ch
26
35
Rise Time
tr
N-Ch
1
1
20
P-Ch
16
26
Turn-Off Delay Time
td(off)
N-Ch
1
3
2
2
P-Ch
16
26
Fall Time
tf
N-Ch
5
9
P-Ch
1
6
26
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
N-Ch
2.6
A
P-Ch
- 2.6
Pulse Diode Forward Currenta
ISM
N-Ch
40
P-Ch
- 40
Body Diode Voltage
VSD
IS = 5.4 A
N-Ch
0.81
1.2
V
IS = - 2 A
P-Ch
- 0.77
- 1.2
Body Diode Reverse Recovery Time
trr
N-Channel
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
P-Channel
IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
1
2
25
ns
P-Ch
31
57
Body Diode Reverse Recovery Charge
Qrr
N-Ch
10
17
nC
P-Ch
29
47
Reverse Recovery Fall Time
ta
N-Ch
10
ns
P-Ch
1
3
Reverse Recovery Rise Time
tb
N-Ch
7
P-Ch
2
3
UD4606G-S08-R
3
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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