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UD4606QL-S08-R Scheda tecnica(PDF) 8 Page - VBsemi Electronics Co.,Ltd

Il numero della parte UD4606QL-S08-R
Spiegazioni elettronici  N- and P-Channel 30 V (D-S) MOSFET
PDF  14 Pages
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Produttore elettronici  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UD4606QL-S08-R Scheda tecnica(HTML) 8 Page - VBsemi Electronics Co.,Ltd

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
8
16
24
32
40
0.0
0.5
1.0
1.5
2.0
2.5
VGS =10 V thru 4V
VGS =3V
VGS =2V
V
DS - Drain-to-Source Voltage (V)
0.010
0.030
0.050
0.070
0.090
0
10203040
I
D - Drain Current (A)
V
GS = 8 V
V
GS = 4.5 V
V
GS = 10 V
0
2
4
6
8
10
0
9
18
27
36
45
ID =10A
VDS =20V
VDS =30V
VDS =10V
Q
g - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0
1234
5
TC = 125 °C
TC = 25 °C
TC = - 55 °C
V
GS - Gate-to-Source Voltage (V)
Crss
0
200
400
600
80
0
1000
0
8
16
24
32
40
Ciss
Coss
V
DS - Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
ID =8A
VGS =4.5 V
VGS =10V
T
J - Junction Temperature (°C)
UD4606QL-S08-R
8
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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