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US5K Scheda tecnica(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Il numero della parte US5K
Spiegazioni elettronici  High Efficiency Recovery rectifiers
PDF  3 Pages
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Produttore elettronici  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Homepage  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

US5K Scheda tecnica(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  US5K Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd US5K Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd US5K Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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Features
Low profile package
Ideal for automated placement
Glass passivated chip junctions
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
High temperature soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Major Ratings and Characteristics
Mechanical Date
Case:
JEDEC DO-214AA molded plastic
body over glass passivated chip
Terminals:
Solder plated, solderable per
JESD22-B102
Polarity:
Laser band denotes cathode end
IF(AV)
5.0 A
VRRM
50 V to 1000 V
IFSM
150 A
trr
50 nS , 75 nS
VF
1.0 V , 1.4 V , 1.7 V
Tj max.
150 °C
y
Maximum Ratings & Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Note 1: Mounted on P.C.B. with 0.28 x 0.28” (7.0 x 7.0mm) copper pad areas.
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Note 2: Pulse test:300μs pulse width,1% duty cycle.
j
Items
Symbol US5A US5B US5D US5G US5J US5K US5M
UNIT
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
IF(AV)
5.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Thermal resistance from junction to lead
(1)
RθJL
20
℃/ W
Operating junction and storage temperature
range
TJ ,TSTG
–55 to +150
Items
Test conditions
Symbol
US5A~US5D
US5G
US5J~US5M
UNIT
Instantaneous forward voltage
IF=5.0 A
(2)
VF
1.0
1.3
1.7
V
nS
Reverse current
VR=VDC
TJ=25℃
IR
5
μA
TJ=100℃
100
Typical junction capacitance
4.0 V ,1MHz
CJ
20
pF
Reverse recovery time
IF = 0.5 A , IR = 1.0 A ,
Irr = 0.25 A
trr
50
75
US5A~US5M
High Efficiency Recovery rectifiers
Rev :
www.leiditech.com
01.06.2018
1/3


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