2SC5518 datasheet(1/2 Pages) PANASONIC

Il numero della parte	2SC5518

Spiegazioni elettronici	Silicon NPN triple diffusion mesa type(For horizontal deflection output)

PDF	2 Pages

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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1

Power Transistors

2SC5518

Silicon NPN triple diffusion mesa type

For horizontal deflection output

s Features

q

High breakdown voltage, and high reliability through the use of a

glass passivation layer

q

High-speed switching

q

Wide area of safe operation (ASO)

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

1500

5

14

7

3.5

40

3

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

Diode forward voltage

Symbol

ICBO

VEBO

hFE

VCE(sat)

VBE(sat)

fT

tstg

tf

VF

Conditions

VCB = 1000V, IE = 0

VCB = 1500V, IE = 0

IE = 500mA, IC = 0

VCE = 5V, IC = 5A

IC = 5A, IB = 1A

VCE = 10V, IC = 0.1A, f = 0.5MHz

IC = 5A, IB1 = 1A, IB2 = –2A

IF = 5A

min

5

typ

3

max

50

1

10

3

1.5

5.0

0.5

–2

Unit

µA

mA

V

MHz

µs

V

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3E Full Pack Package

15.5

±0.5

3.0

±0.3

φ3.2±0.1

5.45

±0.3

123

5.45

±0.3

1.1

±0.1

2.0

±0.2

4.0

5

°

5

°

5

°

5

°

5

°

5

°

0.7

±0.1

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