UT6898G-S08-R datasheet(1/4 Pages) DOINGTER

Il numero della parte	UT6898G-S08-R

Spiegazioni elettronici	Dual N-Channel MOSFET uses advanced trench technology

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Produttore elettronici	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Homepage	http://www.doingter.cn/

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Description：

This Dual N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=20V,ID=12A,RDS(ON)<11mΩ@VGS=4.5V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±10

V

ID

Continuous Drain Current-

12

A

Pulsed Drain Current

1

45

PD

Power Dissipation

2

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJA

Thermal Resistance,Junction to Ambient

2

62.5

℃/W

G2

D1

D2

S1

G1

S2

UT6898G-S08-R

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