UTD36N03L-TN3-R datasheet(3/5 Pages) DOINGTER

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UTD36N03L-TN3-R Scheda tecnica(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Il numero della parte	UTD36N03L-TN3-R

Spiegazioni elettronici	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Homepage	http://www.doingter.cn/

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LsD

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trr

Reverse Recovery Time

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qrr

Reverse Recovery Charge

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Typical Characteristics： (T

C=25℃ unless otherwise noted)

Source-Drain Current(Body Diode)

IF=20A, dI/dt=100A/s

Notes 1.The maximum current rating is package limited.

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature

Notes 3.EAS condition: TJ=25

,VDD=

℃

30V,VG=10V, RG=25Ω

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

VDS Drain-to-Source Voltage(V)

VGS Gate-to-Source Voltage(V)

Figure 3. Max BVDSS vs Junction Temperature

Figure 4. Drain Current

TJ-Junction Temperature(℃)

UTD36N03L-TN3-R

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