2SD2000 datasheet(1/3 Pages) PANASONIC

Il numero della parte	2SD2000

Spiegazioni elettronici	Silicon NPN triple diffusion planar type(For power switching)

PDF	3 Pages

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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1

Power Transistors

2SD2000

Silicon NPN triple diffusion planar type

For power switching

s Features

q

High-speed switching

q

Satisfactory linearity of foward current transfer ratio hFE

q

Large collector power dissipation PC

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

80

60

6

8

4

1

35

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Base to emitter saturation voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

*

hFE2

VBE(sat)

VCE(sat)

fT

ton

tstg

tf

Conditions

VCB = 80V, IE = 0

VEB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 1A

VCE = 4V, IC = 4A

IC = 4A, IB = 0.4A

VCE = 12V, IC = 0.2A, f = 10MHz

IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,

VCC = 50V

min

60

70

20

typ

80

0.3

1.0

0.2

max

100

250

2.0

1.5

Unit

µA

V

MHz

µs

*h

FE1 Rank classification

Rank

Q

P

hFE1

70 to 150

120 to 250

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

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