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US1AFL Scheda tecnica(PDF) 1 Page - Rectron Semiconductor |
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US1AFL Scheda tecnica(HTML) 1 Page - Rectron Semiconductor |
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1 / 5 page ![]() SMALL SURFACE MOUNT ULTRAFAST DIODE VOLTAGE: 50 to 1000 Volts CURRENT: 1.0 Amperes SOD123F(L) FEATURES Low profile package Ideal for automated placement High temperature soldering : 260°C /10 seconds at terminals Glass Passivated Chip Junction Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Free) MECHANICAL DATA Case: JEDEC SOD-123FL Molded plastic over passivated junction Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0006 ounces, 0.0173 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. PARAMETER SYMBOL US1AFL US1BFL US1DFL US1GFL US1JFL US1KFL US1MFL Units Marking Code UAL UBL UDL UGL UJL UKL UML Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current (Note 1) IF(AV) 1.0 Amp Peak forward surge current 8.3ms single half sine-wave @ TL=25 OC IFSM 30 Amps Maximum instantaneous forward voltage 1.0A @ VF 1.0 1.4 1.7 Volts Maximum DC reverse current at rated DC blocking voltage TJ=25 O C IR 1 uA Reverse recovery time IF=0.5A, IR=1A, Irr=0.25A Trr 50 75 100 nS Typical Junction capacitance @ 4V, 1MHz CJ 9 pF ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. PARAMETER SYMBOL US1AFL US1BFL US1DFL US1GFL US1JFL US1KFL US1MFL Units Thermal resistance junction to ambient R JA 180 °C/W Operating and Storage temperature range TJ,TSTG -50 to +150 °C NOTES: 1. Pulse test: 300u pulse width, 1% duty cycle. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A US1AFL U R H T US1MFL 2019-03/0X REV:O |
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