2SD2139 datasheet(1/3 Pages) PANASONIC

Il numero della parte	2SD2139

Spiegazioni elettronici	Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

PDF	3 Pages

Scroll/Zoom	100%

Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

Logo

1 / 3 page

1

Power Transistors

2SD2139

Silicon NPN triple diffusion planar type

For high-current amplification ratio, power amplification

s Features

q

High foward current transfer ratio hFE

q

Satisfactory linearity of foward current transfer ratio hFE

q

Allowing supply with the radial taping

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

80

60

6

3

1

15

2

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Symbol

ICBO

ICEO

IEBO

VCEO

hFE

*

VCE(sat)

fT

Conditions

VCB = 80V, IE = 0

VCE = 40V, IB = 0

VEB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 0.5A

IC = 2A, IB = 0.05A

VCE = 12V, IC = 0.2A, f = 10MHz

min

60

500

typ

50

max

100

2500

1

Unit

µA

V

MHz

*h

FE Rank classification

Rank

Q

P

O

hFE

500 to 1000 800 to 1500 1200 to 2500

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

MT4 Type Package

1.0

10.0

±0.2

0.55

±0.1

2.5

±0.2

2.5

±0.2

5.0

±0.1

2.25

±0.2

1.2

±0.1

0.65

±0.1

0.55

±0.1

C1.0

90

°

C1.0

123

1.05

±0.1

0.35

±0.1

Codice articolo simile - 2SD2139

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Inchange Semiconductor ...	2SD213	263Kb / 2P	isc Silicon NPN Power Transistor
Toshiba Semiconductor	2SD2130	218Kb / 4P	NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
	2SD2131	228Kb / 4P	NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
	2SD2131	148Kb / 5P	Silicon NPN Triple Diffused Type (Darlington)
	2SD2131	148Kb / 5P	Silicon NPN Triple Diffused Type (Darlington)

More results

Descrizione simile - 2SD2139

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Panasonic Semiconductor	2SD1250	48Kb / 2P	Silicon NPN triple diffusion planar type(For power amplification)
	2SD1252	49Kb / 2P	Silicon NPN triple diffusion planar type(For power amplification)
	2SD1266	47Kb / 2P	Silicon NPN triple diffusion planar type(For power amplification)
	2SD1274	56Kb / 3P	Silicon NPN triple diffusion planar type(For power amplification)
	2SD1499	44Kb / 2P	Silicon NPN triple diffusion planar type(For high power amplification)
	2SD1751	48Kb / 2P	Silicon NPN triple diffusion planar type(For power amplification)
	2SD1985	47Kb / 2P	Silicon NPN triple diffusion planar type(For power amplification)
	2SD2052	52Kb / 3P	Silicon NPN triple diffusion planar type(For high power amplification)
	2SD2064	51Kb / 3P	Silicon NPN triple diffusion planar type(For high power amplification)
	2SD2137	54Kb / 3P	Silicon NPN triple diffusion planar type(For power amplification)

More results

2SD2139 Scheda tecnica(PDF) 1 Page - Panasonic Semiconductor

2SD2139 Scheda tecnica(HTML) 1 Page - Panasonic Semiconductor

Codice articolo simile - 2SD2139

Descrizione simile - 2SD2139

Html Pages

1 2 3

Scheda tecnica Scarica

Link URL