STTH2R02AY datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

PF(AV)(W)

IF (AV) (A)

= 0.05

= 0.2

= 0.1

= 0.

= 1

=tp/T

Figure 2. Forward voltage drop versus forward current

(typical values)

0.01

0.10

1.00

10.00

100.00

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T j = 25 °C

j = 150 °C

F(A)

F(V)

Figure 3. Forward voltage drop versus forward current

(maximum values)

0.01

0.10

1.00

10.00

100.00

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T j = 25 °C

j = 150 °C

F(A)

F(V)

Figure 4. Relative variation of thermal impedance junction

to lead versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

th(j-l) / Rth(j-l)

p(s)

Single pulse

Figure 5. Reverse recovery charges versus dIF/dt (typical

values)

1000

QRR(nC)

dIF/dt(A/µs)

R = 160 V

j = 125 °C

F = IF(AV)

Figure 6. Reverse recovery time versus dIF/dt (typical

values)

1000

trr (nC)

dIF/dt(A/µs)

R = 160 V

j = 125 °C

F = IF(AV)

T j =125 °C

STTH2R02AY

Characteristics (curves)

DS13660 - Rev 1

page 3/9

STTH2R02AY Scheda tecnica(PDF) 3 Page - STMicroelectronics

STTH2R02AY Scheda tecnica(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Scheda tecnica Scarica

Link URL