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MCP6V67-E/MS Scheda tecnica(PDF) 3 Page - Microchip Technology |
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MCP6V67-E/MS Scheda tecnica(HTML) 3 Page - Microchip Technology |
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3 / 46 page ![]() 2019 Microchip Technology Inc. DS20006266A-page 3 MCP6V66/6U/7/9 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † VDD –VSS .................................................................................................................................................................6.5V Current at Input Pins ..............................................................................................................................................±2 mA Analog Inputs (VIN+ and VIN-) (Note 1).....................................................................................VSS – 1.0V to VDD +1.0V All Other Inputs and Outputs ....................................................................................................VSS – 0.3V to VDD +0.3V Difference Input Voltage .................................................................................................................................|VDD –VSS| Output Short Circuit Current ........................................................................................................................... Continuous Current at Output and Supply Pins ......................................................................................................................±30 mA Storage Temperature .............................................................................................................................-65°C to +150°C Maximum Junction Temperature .......................................................................................................................... +150°C ESD protection on all pins (HBM, CDM, MM) MCP6V66/6U 4kV, 1.5kV, 400V MCP6V67/9 4kV, 1.5kV, 300V Note 1: See Section 4.2.1 “Rail-to-Rail Inputs”. 1.2 Specifications †Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =20kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5). Parameters Sym. Min. Typ. Max. Units Conditions Input Offset Input Offset Voltage VOS -25 — +25 µV TA =+25°C Input Offset Voltage Drift with Temperature (Linear Temp. Co.) TC1 -150 — +150 nV/°C TA = -40 to +125°C, (Note 1) Input Offset Voltage Quadratic Temp. Co. TC2 —-30 — pV/°C2 TA = -40 to +125°C Input Offset Voltage Aging ∆VOS — ±0.45 — µV 408 hours Life Test at +150°, measured at +25°C. Power Supply Rejection Ratio PSRR 110 134 — dB Input Bias Current and Impedance Input Bias Current IB -50 ±1 +50 pA Input Bias Current across Temperature IB —+20 — pA TA =+85°C IB 0 +0.2 +1.5 nA TA = +125°C Input Offset Current IOS -200 ±60 +200 pA Input Offset Current across Temperature IOS —±50 — pA TA =+85°C IOS -800 ±50 +800 pA TA = +125°C Common Mode Input Impedance ZCM —1013||8 — Ω||pF Note 1: For design guidance only; not tested. |
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