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P0102AL Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte P0102AL
Spiegazioni elettronici  0.25A SCRs
PDF  7 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P0102AL Scheda tecnica(HTML) 3 Page - STMicroelectronics

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Figure
3:
Relative
variation
of
thermal
impedance junction to ambient versus pulse
duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 5: Relative variation of holding current
versus
gate-cathode
resistance
(typical
values)
Figure 6: Relative variation of dV/dt immunity
versus
gate-cathode
resistance
(typical
values)
Figure 7: Relative variation of dV/dt immunity
versus
gate-cathode
capacitance
(typical
values)
Figure 8: Surge peak on-state current versus
number of cycles
1E-2
1E-1
1E+0
1E+1
1E+2
0.01
0.10
1.00
K=[Z
/R
th(j-a)
th(j-a)]
t (s)
p
-40
-20
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & I
R= 1k
L
GK
Ω
1E-2
1E-1
1E+0
1E+1
0
2
4
6
8
10
12
14
16
18
20
R(k )
GK
Ω
I [R
] / I [
=1k ]
HGK
H
Ω
RGK
Tj = 25°C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.1
1.0
10.0
R(k )
GK
Ω
dV/dt[R
] / dV/dt[
=1k ]
GK
Ω
RGK
Tj = 125°C
V = 0.67 x V
D
DRM
0123
4567
0
2
4
6
8
10
C
(nF)
GK
dV/dt[C
] / dV/dt[
=1k ]
GK
Ω
RGK
T
V = 0.67 x V
= 125°C
R= 1k
D
DRM
GK
j
Ω
1
10
100
1000
0
1
2
3
4
5
6
7
I
(A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T
=25°C
amb
t =10ms
p
One cycle



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