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2SC6019 Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device

Il numero della parte 2SC6019
Spiegazioni elettronici  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
PDF  4 Pages
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6019 Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device

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2SC6019
No.8342-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
23
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1.5A, IB=30mA
85
125
mV
IC=3A, IB=60mA
145
215
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=60mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
190
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
7518-003
7003-003
Switching Time Test Circuit
VR
VCC=5V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RB
100
µF
470
µF
PW=20
µs
IB1
IB2
D.C.
≤1%
IC=20IB1= --20IB2=3A
RL
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
IC -- VCE
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
7
6
5
4
3
2
1
0.2
0.1
0.4
0.6
0.8
0.3
0.5
0.7
0.9
1.0
0
0
IB=0mA
10mA
20mA
30mA
40mA
50mA
60mA
IT09436
8
7
6
5
4
3
2
1
0
0
0.1
0.3
0.5
0.7
0.2
0.4
0.6
0.8
0.9
1.0
1.1
1.2
VCE=2V
IT09437
5mA



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