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2SC6044 Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device

Il numero della parte 2SC6044
Spiegazioni elettronici  NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
PDF  4 Pages
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6044 Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device

  2SC6044 Datasheet HTML 1Page - Sanyo Semicon Device 2SC6044 Datasheet HTML 2Page - Sanyo Semicon Device 2SC6044 Datasheet HTML 3Page - Sanyo Semicon Device 2SC6044 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC6044
No.8251-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1.5A, IB=75mA
170
260
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=75mA
0.94
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
5
V
Turn-ON Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
See specified Test Circuit.
350
ns
Fall Time
tf
See specified Test Circuit.
30
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
2038B
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
0.75
4.5
1.6
0.4
12
3
1.5
VR
12V
20IB1= --20IB2=IC=500mA
--5V
+
+
50
Ω
24
Ω
INPUT
OUTPUT
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC -- VCE
IT09350
2.0
1.5
1.0
0.5
0
0
0.2
0.3
0.1
0.4
0.5
0.7
0.6
0.8
0.9
1.0
IC -- VBE
IT09351
0
0.8
1.2
1.4
1.6
1.8
2.0
0.4
0.6
1.0
0.2
0
0.8
0.6
0.4
0.2
1.0
1.2
1.4
1.6
2.0
1.8
VCE=2V
IB=0
1mA
2mA
3mA
4mA
5mA
6mA
8mA
10mA
15mA
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V



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