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MCP48FVB08 Scheda tecnica(PDF) 5 Page - Microchip Technology

Il numero della parte MCP48FVB08
Spiegazioni elettronici  8/10/12-Bit Quad/Octal Voltage Output, 6 LSb INL Digital-to-Analog Converters with SPI Interface
PDF  112 Pages
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Produttore elettronici  MICROCHIP [Microchip Technology]
Homepage  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP48FVB08 Scheda tecnica(HTML) 5 Page - Microchip Technology

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 2020 Microchip Technology Inc.
DS20006362A-page 5
MCP48FXBX4/8
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
Voltage on VDD with Respect to VSS ........................................................................................................ -0.6V to +6.5V
Voltage on All Pins with Respect to VSS ............................................................................................ -0.6V to VDD+0.3V
Input Clamp Current, IIK (VI < 0, VI > VDD, VI > VPP on HV Pins) ........................................................................±20 mA
Output Clamp Current, IOK (VO < 0 or VO > VDD) .................................................................................................±20 mA
Maximum Current out of the VSS Pin (Quad) .........................................................................................................150 mA
(Octal)..........................................................................................................150 mA
Maximum Current into the VDD Pin (Quad) .........................................................................................................150 mA
(Octal)..........................................................................................................150 mA
Maximum Current Sourced by the VOUT Pin...........................................................................................................20 mA
Maximum Current Sunk by the VOUT Pin................................................................................................................20 mA
Maximum Current Sunk by the VREF Pin ...............................................................................................................125 µA
Maximum Input Current Source/Sunk by the SDI, SCK and CS Pins ......................................................................2 mA
Maximum Output Current Sunk by the SDO Output Pin ........................................................................................25 mA
Total Power Dissipation(1) ....................................................................................................................................400 mW
Package Power Dissipation (TA = +50°C, TJ = +150°C)
20-Lead TSSOP......................................................................................................................................1300 mW
20-Lead VQFN (5 x 5 mm, ML)...............................................................................................................2800 mW
ESD Protection on all Pins
±6 kV (HBM)
±400V (MM)
±2 kV (CDM)
Latch-up (per JEDEC® JESD78A) at +125°C ....................................................................................................±100 mA
Storage Temperature ..............................................................................................................................-65°C to +150°C
Ambient Temperature with Power Applied .............................................................................................-55°C to +125°C
Soldering Temperature of Leads (10 seconds) ..................................................................................................... +300°C
Maximum Junction Temperature (TJ).................................................................................................................... +150°C
Note 1: Power dissipation is calculated as follows:
PDIS = VDD × {IDD –  IOH} +  {(VDD –VOH) × IOH} + (VOL × IOL)
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.



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