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TLSH263P Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLSH263P Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() TLSH263P 2002-09-25 2 Electrical And Optical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 20mA ― 2.1 2.5 V Reverse current IR VR = 4V ― ― 50 µA Luminous intensity IV IF = 20mA (Note) 85 300 ― mcd Peak emission wavelength λp IF = 20mA ― 623 ― nm Spectral line half width ∆λ IF = 20mA ― 15 ― nm Dominant wavelength λd IF = 20mA ― 613 ― nm (Note) : Lamps are classified into the following three ranks according to their luminous intensity. Measurement tolerance for each limit is ±15%. N: 100 -200mcd, P: 180-360mcd, Q: 320-640mcd. Precaution Please be careful of the followings · Soldering temperature: 260°C max Soldering time: 3s max (Soldering portion of lead: Up to 2mm from the body of the device) · If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to the resin.Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp,please ensure that it will not be affected by this IR light. |
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