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AT45DB321E Scheda tecnica(PDF) 63 Page - Dialog Semiconductor

Il numero della parte AT45DB321E
Spiegazioni elettronici  32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory
PDF  70 Pages
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Produttore elettronici  DIALOG [Dialog Semiconductor]
Homepage  http://www.dialog-semiconductor.com/
Logo DIALOG - Dialog Semiconductor

AT45DB321E Scheda tecnica(HTML) 63 Page - Dialog Semiconductor

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AT45DB321E
8784L–DFLASH–3/2019
Figure 25-2. Algorithm for Programming or Re-programming of the Entire Array Randomly
Notes: 1.
To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within
every 50,000 cumulative page erase and program operations
2.
A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite
command must use the address specified by the page address pointer
3.
Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to
wait until 50,000 cumulative page erase and program operations have accumulated before rewriting all
pages of the sector. See application note AN-4 (“Using Adesto’s Serial DataFlash”) for more details
START
Main Memory Page
to Buffer Transfer
(53h, 55h)
Increment Page
Address Pointer
(2)
Auto Page Rewrite
(2)
(58h, 59h)
END
Provide Address of
Page to Modify
If planning to modify multiple
bytes currently stored within
a page of the Flash array
Main Memory Page Program
through Buffer
(82h, 85h)
Buffer Write
(84h, 87h)
Buffer to Main
Memory Page Program
(83h, 86h)



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