VN2224 datasheet(1/14 Pages) MICROCHIP

Il numero della parte	VN2224

Spiegazioni elettronici	N-Channel Enhancement-Mode Vertical DMOS FET

PDF	14 Pages

Scroll/Zoom	100%

Produttore elettronici	MICROCHIP [Microchip Technology]

Homepage	http://www.microchip.com

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1 / 14 page

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2021 Microchip Technology Inc.

DS20005988A-page 1

VN2224

Features

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

• Low CISS and Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

General Description

The VN2224 Enhancement-mode (normally-off)

transistor uses a vertical DMOS structure and a

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited for a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Type

See Table 3-1 for pin information.

GATE

SOURCE

DRAIN

3-lead TO-92

(Top view)

N-Channel Enhancement-Mode Vertical DMOS FET

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