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ECH8655R-R-TL-H Scheda tecnica(PDF) 5 Page - ON Semiconductor

Il numero della parte ECH8655R-R-TL-H
Spiegazioni elettronici  N-Channel Power MOSFET
PDF  7 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ECH8655R-R-TL-H Scheda tecnica(HTML) 5 Page - ON Semiconductor

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ECH8655R−R−TL−H
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5
Figure 9. SW Time − ID
Figure 10. VGS − Qg
Figure 11. ASO
Figure 12. PD − TA
ID, Drain Current (V)
TA, Ambinet Temperature (5C)
Qg, Total Gate Charge (nC)
VDS, Drain−to−Source Voltage (V)
7
5
3
2
1000
7
5
3
2
100
0.1
2
3
5
1.0
2
3
5
10
10
8
6
4
2
0
0
2
4
6
8
10
1214
16
1820
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01 2
5
0.1
2
1.0
2
5
10
2
1.8
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
PW ≤ 10 ms
VDD = 10 V
VGS = 4 V
td(on)
tr
tf
td(off)
7
7
VDS = 10 V
ID = 9 V
3
IDP = 60 A
IDP = 9 A
Operation in this
area is limited by RDS(on)
TA = 25°C
Single pulse
When mounted on ceramic substrate
(900mm2 x 0.8 mm) 1 unit
35
7
3
73 5 7
When mounted on ceramic substrate
(900mm2 x 0.8 mm)
When mounted on ceramic substrate
(900mm2 x 0.8 mm)
Total Dissinpation
1 unit
Since the ECH8655R−R−TL−H is a MOSFET product, please avoid using this device in the vicinity of highly charged
objects.



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