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ADP5092ACPZ-1-R7 Scheda tecnica(PDF) 5 Page - Analog Devices

Il numero della parte ADP5092ACPZ-1-R7
Spiegazioni elettronici  Ultralow Power Energy Harvester PMUs with MPPT and Charge Management
PDF  28 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
Logo AD - Analog Devices

ADP5092ACPZ-1-R7 Scheda tecnica(HTML) 5 Page - Analog Devices

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Data Sheet
ADP5091/ADP5092
Rev. A | Page 5 of 28
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
ENERGY STORAGE MANAGEMENT
Internal Reference Voltage
VINT_REF
0.955
1.011
1.067
V
Battery Stop Discharging
Threshold
VSETSD
2.0
VBAT_TERM V
Hysteresis Resistor
RSETSD_HYS
80
115
160
kΩ
Battery Terminal Charging
Threshold
VBAT_TERM
2.2
5.2
V
Hysteresis
VBAT_TERM_HYS
3
3.1
%
PGOOD Rising Threshold at SYS Pin
VSYS_PG
VSETSD
VBAT_TERM V
PGOOD Pull-Up Resistor
11.6
17.0
kΩ
PGOOD Pull-Down Resistor
11.6
17.0
kΩ
PGOOD High Voltage
VPGOOD_HIGH
VSYS
V
Battery Switches On Resistance
RBAT_SW_ON
Pin to pin measurement
0.59
0.85
Ω
Battery Source Current
IBAT
1
A
Leakage Current at BAT Pin
IBAT_LEAK
VBAT = 2 V, VSETSD = 2.2 V, VSYS = 2 V
22
50
nA
VBAT = 3.3 V, VSETSD = 2.2 V, VSYS = 0 V
3.5
35
nA
BACK_UP POWER PATH
Turning Off BACK_UP Switch
Threshold on BAT
VSETBK
2.0
VBAT_TERM V
Hysteresis Resistor
RSETBK_HYS
80
115
160
kΩ
BACK_UP Switches On Resistance
0.85
1.20
Ω
BACK_UP and BAT Comparator
VSYS ≥ VSYS_TH
Offset
VBKP_OFFSET
158
190
271
mV
Hysteresis
VBAT_HYS
68
75
108
mV
BACK_UP Current Capability
IBKP
VSYS < VSYS_TH
250
µA
Leakage Current at BACK_UP Pin
IBKP_LEAK
VBACK_UP = VSYS = VBAT = 3 V
16
40
nA
THERMAL SHUTDOWN
Threshold
TSHDN
VSYS ≥ VSYS_TH
142
°C
Hysteresis
THYS
15
°C



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