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FDPC8014AS Scheda tecnica(PDF) 5 Page - ON Semiconductor

Il numero della parte FDPC8014AS
Spiegazioni elettronici  MOSFET ??Dual, N-Channel, POWERTRENCH, Power Clip, Asymmetric 25 V
PDF  12 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
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FDPC8014AS Scheda tecnica(HTML) 5 Page - ON Semiconductor

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5
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
1.0
1.5
2.0
2.5
3.0
0
15
30
45
60
75
VGS, GATE TO SOURCE VOLTAGE (V)
0.0
0.2
0.4
0.6
0.8
1.0
0.001
0.01
0.1
1
10
100
VSD, BODY DIODE FORWARD VOLTAGE (V)
VDS = 5 V
TJ = 150°C
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
TJ = 25°C
TJ = −55°C
VGS = 0 V
TJ = 150°C
TJ = 25°C
TJ = −55°C
0
6
12
18
24
30
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
ID = 20 A
VDD = 13 V
VDD = 10 V
VDD = 15 V
0.1
1
10
25
10
100
1000
10000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
f = 1 MHz
VGS = 0 V
0.001
0.01
0.1
1
10
1
10
30
TJ = 125°C
tAV, TIME IN AVALANCHE (ms)
TJ = 25°C
TJ = 100°C
100
25
50
75
100
125
0
10
20
30
40
50
60
TC, CASE TEMPERATURE (°C)
150
VGS = 4.5 V
VGS = 10 V
RqJC = 6.0°C/W



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