MSCSM170AM058CD3AG datasheet(3/16 Pages) MICROCHIP

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Electrical Specifications

The following sections show the electrical specifications of the MSCSM170AM058CD3AG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM170AM058CD3AG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

VDSS

Drain-Source voltage

1700

Continuous drain current

TC = 25 °C

353

TC = 80 °C

281

IDM

Pulsed drain current

700

VGS

Gate-Source voltage

–10/23

RDS(on)

Drain-Source ON resistance

7.5

mΩ

Power dissipation

TC = 25 °C

1642

The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM170AM058CD3AG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

IDSS

Zero gate voltage

drain current

VGS = 0 V; VDS = 1700 V

—

600

µA

RDS(on)

Drain-Source on

resistance

VGS = 20 V

ID = 180 A

TJ = 25 °C

—

5.8

7.5

mΩ

TJ = 175 °C

—

10.2

—

VGS(th)

Gate threshold

voltage

VGS = VDS; ID = 15 mA

1.8

3.3

—

IGSS

Gate-Source

leakage current

VGS = 20 V; VDS = 0 V

—

600

MSCSM170AM058CD3AG

Electrical Specifications

Datasheet

DS00003977A-page 3

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