AOU402 datasheet(1/5 Pages) AOSMD

Il numero della parte	AOU402

Spiegazioni elettronici	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	AOSMD [Alpha & Omega Semiconductors]

Homepage	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

100

125

RθJC

4

7.5

Repetitive avalanche energy L=0.1mH

C

23

A

mJ

Junction and Storage Temperature Range

A

PD

°C

20

10

-55 to 175

TC=100°C

Avalanche Current

C

12

ID

12

8.5

30

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

Maximum

Units

Parameter

TC=25°C

TC=100°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

60

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

Steady-State

°C/W

AOU402

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 60V

ID = 12 A (VGS = 10V)

RDS(ON) < 60 mΩ (VGS = 10V)

RDS(ON) < 85 mΩ (VGS = 4.5V)

General Description

The AOU402 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications. Standard

Product AOU402 is Pb-free (meets ROHS & Sony

259 specifications). AOU402L is a Green Product

ordering option. AOU402 and AOU402L are

electrically identical.

G

D

S

Top View

Drain Connected

to Tab

TO-251

G

D

S

Alpha & Omega Semiconductor, Ltd.

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