D452 datasheet(1/5 Pages) AOSMD

Il numero della parte	D452

Spiegazioni elettronici	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	AOSMD [Alpha & Omega Semiconductors]

Homepage	http://www.aosmd.com

Logo

1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

14.2

20

39

50

RθJC

2.5

3

W

TA=70°C

2.1

Power Dissipation

A

TA=25°C

PDSM

3

Repetitive avalanche energy L=0.1mH

C

135

A

mJ

Junction and Storage Temperature Range

A

PD

°C

50

25

-55 to 175

TC=100°C

Avalanche Current

C

30

ID

55

100

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

Maximum

Units

Parameter

TC=25°C

TC=100°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

25

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

AOD452

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) =25V

ID = 55 A (VGS = 10V)

RDS(ON) < 8.5 mΩ (VGS = 10V)

RDS(ON) < 14 mΩ (VGS = 4.5V)

General Description

The AOD452 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard product AOD452 is Pb-free (meets ROHS &

Sony 259 specifications). AOD452L is a Green

Product ordering option. AOD452 and AOD452L are

electrically identical.

G

D

S

G

D

S

TO-252

D-PAK

Top View

Drain Connected to

Tab

Alpha & Omega Semiconductor, Ltd.

Codice articolo simile - D452

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
eupec GmbH	D452N	101Kb / 5P	European Power- Semiconductor and Electronics Company

More results

Descrizione simile - D452

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

D452 Scheda tecnica(PDF) 1 Page - Alpha & Omega Semiconductors

D452 Scheda tecnica(HTML) 1 Page - Alpha & Omega Semiconductors

Codice articolo simile - D452

Descrizione simile - D452

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL