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MJB147 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte MJB147
Spiegazioni elettronici  isc Silicon PNP Darlington Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJB147 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
MJB147
DESCRIPTION
·
High DC Current Gain-
: hFE =1000(Min)@ IC= -5A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = =-100V(Min)
·
Complement to Type MJB142
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current- Continuous
-0.5
A
PC
Collector Power Dissipation
@TC=25℃
-75
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.66
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
35.7
℃
/W


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