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ISCNH342P Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH342P Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH342P FEATURES · Drain Current : ID= 40A@ TC=25℃ · Drain Source Voltage : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Low gate charge · Fast switching speed ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 120 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W |
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