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TN2510 Scheda tecnica(PDF) 5 Page - Microchip Technology |
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TN2510 Scheda tecnica(HTML) 5 Page - Microchip Technology |
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5 / 14 page ![]() 2020 Microchip Technology Inc. DS20005950A-page 5 TN2510 FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: V(th) and RDS(ON) with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. T J ( OC) -50 0 50 100 150 1.1 1.0 0.9 V GS (volts) 0 2 4 6 8 10 10 8 6 4 2 0 T A = -55 OC V GS = 25V 125OC 25OC 100 75 50 25 0 0 10 20 30 40 f = 1MHz C ISS C OSS C RSS V DS (volts) I D (amperes) V GS = 5.0V 0 2 4 6 8 10 V GS = 10V 10 8 6 4 2 0 1.2 1.1 1.0 0.9 0.8 -50 0 50 100 150 2.0 1.6 1.2 0.8 0.4 R DS(ON) @5.0V, 0.75A T J ( OC) V (th) @ 1.0mA Q G (nanocoulombs) 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 70pF 190pF V DS = 10V V DS = 40V |
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