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2SD669A Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SD669A
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD669A Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD669A
DESCRIPTION
·
High Collector Current-IC= 1.5A
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·
Good Linearity of hFE
·
Low Saturation Voltage
·
Complement to Type 2SD649
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICP
Collector Current-Pulse
3
A
PC
Collector Power Dissipation
@ TC=25℃
20
W
Collector Power Dissipation
@ Ta=25℃
1
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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