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STM32L071VB Scheda tecnica(PDF) 66 Page - STMicroelectronics |
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STM32L071VB Scheda tecnica(HTML) 66 Page - STMicroelectronics |
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66 / 148 page ![]() Electrical characteristics STM32L071xx 66/148 DS10690 Rev 7 Figure 16. IDD vs VDD, at TA= 25/55/85/105 °C, Run mode, code running from Flash memory, Range 2, HSE, 1WS Table 30. Current consumption in Run mode vs code type, code with data processing running from Flash memory Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from Flash memory) Supply current in Run mode, code executed from Flash memory fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(1) Range 3, VCORE=1.2 V, VOS[1:0]=11 Dhrystone 4 MHz 650 µA CoreMark 655 Fibonacci 485 while(1) 385 while(1), 1WS, prefetch OFF 375 Range 1, VCORE=1.8 V, VOS[1:0]=01 Dhrystone 32 MHz 6,65 mA CoreMark 6,9 Fibonacci 6,75 while(1) 5,8 while(1), prefetch OFF 5,5 1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). MSv37843V1 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 1.65 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 -40 °C 25 °C 55 °C 85 °C 105 °C 125 °C VDD (V) |
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