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STM32WL55JC Scheda tecnica(PDF) 103 Page - STMicroelectronics

Il numero della parte STM32WL55JC
Spiegazioni elettronici  Multiprotocol LPWAN dual core 32-bit Arm® Cortex®-M4/M0 LoRa®, (G)FSK, (G)MSK, BPSK, up to 256KB Flash, 64KB SRAM
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
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DS13293 Rev 2
103/147
STM32WL55/54xx
Electrical characteristics
137
Figure 18. HSI16 frequency versus temperature
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 48
0.2
0.3
0.4
%
Trimming code is a
multiple of 48
–4
–6
–8
DuCy(HSI16)
(2)
Duty cycle
-
45
-
55
∆Temp(HSI16) HSI16 oscillator frequency drift
Tj = 0 to 85 °C
–1
-
1
Tj = -40 to 125 °C
–2
-
1.5
∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD = 1.8 V to 3.6 V
–0.1
-
0.05
tsu(HSI16)(2)
HSI16 oscillator start-up time
-
-
0.8
1.2
μs
tstab(HSI16)(2) HSI16 oscillator stabilization time
-
-
3
5
IDD(HSI16)(2) HSI16 oscillator power consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.
Table 64. HSI16 oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
MSv66006V3
15.6
15.7
15.8
15.9
16
16.1
16.2
16.3
16.4
-40
-20
0
20
40
60
80
100
120
MHz
°C
Mean
Min
Max
+2 %
+1.5 %
+1 %
-1 %
-1.5 %
-2 %



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