SIRC04DP datasheet(3/9 Pages) VISHAY

3 / 9 page

SiRC04DP

www.vishay.com

Vishay Siliconix

S21-0840-Rev. B, 09-Aug-2021

Document Number: 62954

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

100

0.0

0.5

1.0

1.5

2.0

2.5

DS - Drain-to-Source Voltage (V)

GS = 10 V thru 4 V

GS = 2 V

GS = 3 V

0.0015

0.0019

0.0023

0.0027

0.0031

0.0035

100

D - Drain Current (A)

GS = 4.5 V

GS = 10 V

g - Total Gate Charge (nC)

DS = 15 V

DS = 20 V

DS = 10 V

D = 10 A

100

0.0

0.8

1.6

2.4

3.2

4.0

GS - Gate-to-Source Voltage (V)

C = 25 °C

C = 125 °C

C = - 55 °C

900

1800

2700

3600

4500

DS - Drain-to-Source Voltage (V)

iss

oss

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0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

J - Junction Temperature (°C)

D = 15 A

GS = 10 V

GS = 4.5 V

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