SIRC18DP datasheet(1/9 Pages) VISHAY

Il numero della parte	SIRC18DP

Spiegazioni elettronici	N-Channel 30 V (D-S) MOSFET With Schottky Diode

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SiRC18DP

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Vishay Siliconix

S21-0843-Rev. D, 09-Aug-2021

1

Document Number: 76402

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET With Schottky Diode

FEATURES

• TrenchFET® Gen IV power MOSFET

•SkyFET® with monolithic Schottky diode

• Optimized RDS x Qg and RDS x Qgd FOM

elevates efficiency for high-frequency switching

• 100 % Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous buck

• Synchronous rectification

•DC/DC conversion

PRODUCT SUMMARY

MOSFET

VDS (V)

30

RDS(on) max. (

Ω) at VGS = 10 V

0.00110

RDS(on) max. (

Ω) at VGS = 4.5 V

0.00154

Qg typ. (nC)

35

ID (A) a, g

60

SCHOTTKY

VF (V) at 10 A

0.55

IF (A) a, g

60

Configuration

Single plus integrated Schottky

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-channel MOSFET

G

S

D

Schottky

diode

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiRC18DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

30

V

Gate-source voltage

VGS

+20, -16

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

60 a

A

TC = 70 °C

60 a

TA = 25 °C

52 b, c

TA = 70 °C

42 b, c

Pulsed drain current (t = 100 μs)

IDM

250

Continuous source current (MOSFET diode conduction)

TC = 25 °C

IS

60 a

TA = 25 °C

5 a, b

Single pulse avalanche current

L = 0.1 mH

IAS

30

Single pulse avalanche energy

EAS

45

mJ

Maximum power dissipation

TC = 25 °C

PD

54.3

W

TC = 70 °C

34.7

TA = 25 °C

5 b, c

TA = 70 °C

3.2 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature)

260

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