SISC06DN datasheet(2/9 Pages) VISHAY

2 / 9 page

SiSC06DN

www.vishay.com

Vishay Siliconix

S21-0841-Rev. B, 09-Aug-2021

Document Number: 62944

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing

c. TCASE = 25 °C; Expected voltage stress during 100 % UIS test. Production data log is not available

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

Drain-source breakdown voltage

(transient) c

VDSt

VGS = 0 V, ID(aval) = 15 A, ttranscient

≤ 50 ns

Gate-source threshold voltage

VGS(th)

VDS = VGS , ID = 250 μA

2.1

Gate-source Leakage

IGSS

VDS = 0 V, VGS = +20 V, -16 V

± 100

Zero gate voltage drain current

IDSS

VDS = 30 V, VGS = 0 V

0.02

0.20

VDS = 30 V, VGS = 0 V, TJ = 55 °C

0.13

On-state drain current a

ID(on)

VDS

≥ 5 V, VGS = 10 V

Drain-source on-state resistance a

RDS(on)

VGS = 10 V, ID = 15 A

0.0022

0.0027

VGS = 4.5 V, ID = 10 A

0.0032

0.0040

Forward transconductance a

gfs

VDS = 15 V, ID = 15 A

120

Dynamic b

Input capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

2455

Output capacitance

Coss

350

Reverse transfer capacitance

Crss

-60

Crss/Ciss ratio

0.025

0.050

Total gate charge

VDS = 15 V, VGS = 10 V, ID = 10 A

38.5

VDS = 15 V, VGS = 4.5 V, ID = 10 A

17.5

Gate-source charge

Qgs

-6.3

Gate-drain charge

Qgd

-2.8

Output charge

Qoss

VDS = 15 V, VGS = 0 V

Gate resistance

f = 1 MHz

0.4

1.15

Turn-on delay time

td(on)

VDD = 15 V, RL = 1.5

≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

-12

Rise time

-14

Turn-off delay time

td(off)

-23

Fall time

-8

Turn-on delay time

td(on)

VDD = 15 V, RL = 1.5

≅ 10 A, VGEN = 10 V, Rg = 1 Ω

-29

Rise time

100

Turn-off delay time

td(off)

-20

Fall time

-9

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

TC = 25 °C

Pulse diode forward current

ISM

100

Body diode voltage

VSD

IS = 5 A, VGS = 0 V

0.47

0.7

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs,

TJ = 25 °C

-31

Body diode reverse recovery charge

Qrr

-19

Reverse recovery fall time

-16

Reverse recovery rise time

-15

SISC06DN Scheda tecnica(PDF) 2 Page - Vishay Siliconix

SISC06DN Scheda tecnica(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9

Scheda tecnica Scarica

Link URL