3

3

Intrinsic Diode

Each MOSFET V+=200V

Ω

OUTPUT CHARACTERISTICS

RDS (ON) 1 4

VDS(ON) Voltage

Instantaneous Forward Voltage

Reverse Recovery Time

1

Leakage Current

+Vcc

SUPPLY CHARACTERISTICS

Quiescent Bias Current

Vcc Voltage Range 1

+VB

SUPPLY CHARACTERISTICS

Quiescent Bias Current

Bias Current @ 20KHz

+VB Voltage Range

LOGIC CONTROL INPUTS, HINA, LINA, HINB, LINB

1

Input Voltage LO

Input Voltage HI

SWITCHING CHARACTERISTICS

1

Rise Time

Fall Time

Dead Time

V+

θJC

ABSOLUTE MAXIMUM RATINGS

Parameter

ELECTRICAL SPECIFICATIONS

Units

Ω

V

V

nS

µA

mA

V

µA

mA

V

V

V

µA

nS

nS

µS

Max.

0.09

1.8

1.2

330

250

3.2

18

300

6

18

0.8

-

20

-

-

-

MSK 4227

Typ.

-

1.2

1.02

-

3.0

0.9

15

100

4

15

-

-

-

90

100

1

Min.

-

-

-

-

-

-

7.4

-

-

9.8

-

2.7

-

-

-

-

Test Conditions

2

2

NOTES:

1

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

2

+Vcc=+15V, +VB=+15V, V+=100V, AV-, BV- = Ground unless otherwise specified.

3

Measured using a 300µS pulse with a 2% Duty Cycle.

4

On Resistance is specified for the Internal MOSFET for Thermal Calculations. It does not include the package pin resistance.

Tc= +25°C Unless Otherwise Specified

Rev. B

11/04

High Voltage Supply

Logic Supply

Continuous Output Current

Peak Output Current

Thermal Resistance

(Output Switches @ 125°C)

200V

18V

20A

44A

2.3°C/W

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

MSK4227

Junction Temperature

-55°C to +125°C

300°C

-40°C to +85°C

+150°C