TP5335 datasheet(2/14 Pages) MICROCHIP

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TP5335

DS20005704D-page 2

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1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings(†)

Drain-to-Source Voltage....................................................................................................................................... BVDSS

Drain-to-Gate Voltage .......................................................................................................................................... BVDGS

Gate-to-Source Voltage.......................................................................................................................................... ±20V

Junction Temperature, TJ .................................................................................................................... –55°C to +150°C

Storage Temperature, TS...................................................................................................................... –55°C to +150°C

†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage

to the device. This is a stress rating only, and functional operation of the device at those or any other con-

ditions above those indicated in the operational sections of this specification is not intended. Exposure to

maximum rating conditions for extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS – COMMERCIAL

Electrical Specifications: TA = TJ = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C

unless otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle.)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-Source Breakdown

Voltage

BVDSS

–350

—

VGS = 0V, ID = –100 µA

Gate Threshold Voltage

VGS(th)

–1

—

–2.4

VDS = VGS, ID = –1 mA

Change in VGS(th)

with Temperature

ΔVGS(th)

——

4.5

mV/°C VDS = VGS, ID = –1 mA (Note 1)

Gate Body Leakage

IGSS

—

–100

VGS = ±20V, VDS = 0V

Zero-Gate Voltage Drain Current

IDSS

—

–10

µA

VDS = Maximum rating,

VGS = 0V

——

–1

VDS = Maximum rating,

VGS = 0V, TA = 125°C (Note 1)

On-State Drain Current

ID(ON)

–200

—

VGS = –4.5V, VDS = –25V

–400

—

VGS = –10V, VDS = –25V

Static Drain-to-Source On-State

Resistance

RDS(ON)

——

VGS = –4.5V, ID = –150 mA

——

VGS = –10V, ID = –200 mA

Change in RDS(ON) with

Temperature

ΔRDS(ON)

——

1.7

%/°C

VGS = –10V, ID = –200 mA

(Note 1)

Note 1: Specification is obtained by characterization and is not 100% tested.

DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE

Electrical Specifications: Boldface specification limits apply over the full operating temperature range of

TA =TJ = –55°C, 25°C, and 150°C unless otherwise specified. Non-boldfaced specification limits apply only to

TA =TJ = 25°C unless otherwise specified. All DC parameters are 100% tested at all three temperatures unless

otherwise specified. (Pulse test: 300 µs pulse, 2% duty cycle.)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-Source Breakdown

Voltage

BVDSS

–350

——

VGS = 0V, ID = –100 µA

Gate Threshold Voltage

VGS(th)

–1

—

–2.4

VVDS = VGS, ID = –1 mA

Change in VGS(th)

with Temperature

ΔVGS(th)

—3.3

—

mV/°C VDS = VGS, ID = –1 mA (Note 1)

Gate Body Leakage

IGSS

—

–100

VGS = ±20V, VDS = 0V

——

–220

VGS = ±20V, VDS = 0V

Note 1: Specification is obtained by characterization and is not 100% tested.

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