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IPS031R Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IPS031R
Spiegazioni elettronici  FULLY PROTECTED POWER MOSFET SWITCH
PDF  11 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IPS031R Scheda tecnica(HTML) 2 Page - International Rectifier

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IPS031R
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max) Continuous drain to source voltage
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
oC
TAmbient = 85oC, IN = 5V, rth = 50oC/W, Tj = 125oC) 1" sq. footprint
3.3
A
TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Std. footprint
2
Rin
Recommended resistor in series with IN pin
0.2
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
1
µS
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70
µm copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1)
rth=100oC/W
1.6
D-Pak Std footprint
rth=5oC/W
18
D-Pak with Rth=5oC/W
rth=50oC/W
3
D-Pak with sq. footprint
Isd pulsed Diode max. pulsed current (1)
—18
Pd
Maximum power dissipation
(1)
rth=50oC/W
2.5
rth=100oC/W
1.25
ESD1
Electrostatic discharge voltage (Human Body)
4
C=100pF, R=1500
Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
0.5
C=200pF, R=0
Ω, L=10µH
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
300
V
W
A
oC
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance with standard footprint
100
Rth 2
Thermal resistance with 1" square footprint
50
Rth 3
Thermal resistance junction to case
3
Thermal Characteristics
oC/W
D-PAK
kV



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