BLS9G2934L-400_LS-400

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Product data sheet

Rev. 1 — 6 April 2017

4 of 13

BLS9G2934L(S)-400

LDMOS S-band radar power transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLS9G2934L-400 and BLS9G2934LS-400 are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

7.2 Impedance information

[1]

Impedances are taken at a single halve of the push-pull transistor

Table 8.

Typical impedance

f

ZS[1]

ZL[1]

(GHz)

(

)

(

)

2.9

1.24

 j5.79

1.10

 j3.97

3.0

3.36

 j6.81

1.74

 j3.98

3.1

7.10

 j3.33

2.49

 j3.43

3.2

3.51

 j0.05

2.50

 j3.43

3.3

1.74

 j0.92

2.76

 j3.70

3.4

1.31

 j1.89

1.89

 j3.16

Fig 1.

Definition of transistor impedance

001aag189

drain

gate