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INA350CDSIDDFR Scheda tecnica(PDF) 8 Page - Texas Instruments

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Il numero della parte INA350CDSIDDFR
Spiegazioni elettronici  INA350 Cost and Size Optimized, Low Power, 1.8-V to 5.5-V Selectable Gain Instrumentation Amplifier
PDF  45 Pages
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Produttore elettronici  TI [Texas Instruments]
Homepage  http://www.ti.com
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INA350CDSIDDFR Scheda tecnica(HTML) 8 Page - Texas Instruments

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7.5 Electrical Characteristics (continued)
For VS = (V+) – (V–) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V) at TA = 25°C, VREF = VS/2, G = 10, 20, 30 & 50, RL = 10 kΩ
connected to VS / 2, VCM = [(VIN+) + (VIN–)] / 2 = VS / 2, VIN = (VIN+) – (VIN–) = 0 V and VOUT = VS / 2 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
EMIRR
Electro-magnetic
interference rejection ratio
f = 1 GHz, VIN_EMIRR = 100 mV
96
dB
SR
Slew rate
VS = 5 V, VO = 2 V step
0.24
V/µs
tS
Settling time
G = 10, To 0.1%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
17
µs
G = 10, To 0.01%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
38
G = 20, To 0.1%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
20
G = 20, To 0.01%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
27
Settling time
G = 30, To 0.1%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
30
G = 30, To 0.01%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
57
G = 50, To 0.1%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
44
G = 50, To 0.01%, VS = 5.5 V, VSTEP = 2 V, CL = 10 pF
85
Overload recovery
VIN = 1 V, G = 10
16
µs
Overload recovery
VIN = 1 V, G = 50
VIN = 1 V, G = 50
6.5
µs
REFERENCE INPUT
RIN
Input impedance
60
kΩ
Voltage range
(V–)
(V+)
V
Gain to output
1
V/V
Reference gain error
±0.004
%
POWER SUPPLY
VS
Power-supply voltage
Single-supply
1.7
5.5
V
VS
Power-supply voltage
Dual-supply
±0.85
±2.75
V
IQ
Quiescent current
VIN = 0 V
100
125
µA
TA = –40°C to 125°C
135
IQSD
Quiescent current per
amplifier
All amplifiers disabled, SHDN = V–
0.70
1.25
µA
VIL
Logic low threshold
voltage (Gain Select)
G = 10 for INA350ABS, G = 30 for INA350CDS
(V–) + 0.2 V
V
VIH
Logic high threshold
voltage (Gain Select)
G = 20 for INA350ABS, G = 50 for INA350CDS
(V–) + 1 V
V
tON
Amplifier enable time (full
shutdown) (6)
VCM = VS / 2, VO = 0.9 × VS / 2,
RL connected to V–
100
µs
tOFF
Amplifier disable time (6)
VCM = VS / 2, VO = 0.1 × VS / 2,
RL connected to V–
4
µs
SHDN pin input bias
current (per pin)
(V+) ≥ SHDN ≥ (V–) + 1 V
10
nA
SHDN pin input bias
current (per pin)
(V–) ≤ SHDN ≤ (V–) + 0.2 V
175
nA
(1)
Total offset, referred-to-input (RTI): VOS = (VOSI) + (VOSO / G).
(2)
Offset drifts are uncorrelated. Input-referred offset drift is calculated using: ΔVOS(RTI) = √[ΔVOSI 2 + (ΔVOSO / G)2]
(3)
Input common mode voltage range of the just the input stage of the instrumentation amplifier. The entire INA350x input range depends
on the combination input common-mode voltage, differential voltage, gain, reference voltage and power supply voltage. Typical
Characteristic curves will be added with more information.
(4)
Min and Max values are specified by characterization.
(5)
Total RTI voltage noise is equal to: eN(RTI) = √[eNI 2 + (eNO / G)2]
(6)
Disable time (tOFF) and enable time (tON) are defined as the time interval between the 50% point of the signal applied to the SHDN pin
and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level.
INA350
SBOSAA0B – NOVEMBER 2021 – REVISED APRIL 2022
www.ti.com
8
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Product Folder Links: INA350



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