QPD1008LEVB2 datasheet(1/20 Pages) QORVO

Il numero della parte	QPD1008LEVB2

Spiegazioni elettronici	125W, 50V, DC ??3.2 GHz, GaN RF Transistor

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Produttore elettronici	QORVO [Qorvo, Inc]

Homepage	https://www.qorvo.com/

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QPD1008L

125W, 50V, DC

– 3.2 GHz, GaN RF Transistor

Data Sheet Rev. I, October 2021 | Subject to change without notice

1 of 20

www.qorvo.com

Product Features

• Frequency: DC to 3.2 GHz

• Output Power (P3dB)1: 162 W

• Linear Gain1: 17.5 dB

• Typical DEFF3dB1: 74%

• Operating Voltage: 50 V

• Low thermal resistance package

• CW and Pulse capable

Note: 1 @ 2 GHz

General Description

The QPD1008L is a 125 W (P3dB) wideband unmatched

discrete GaN on SiC HEMT which operates from DC to 3.2

GHz with a 50V supply rail.

The device is in an industry

standard air cavity package and is ideally suited for military

and

civilian

radar,

land

mobile

and

military

radio

communications, avionics, and test instrumentation. The

device can support pulsed, CW, and linear operation.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumenation

• Wideband or narrowband amplifiers

• Jammers

• Avionics

Part No.

Description

QPD1008L

DC – 3.2 GHz RF Transistor

QPD1008LPCB4B01

0.96

– 1.215 GHz EVB

QPD1008LEVB2

1.1

– 1.5 GHz EVB

1

2

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