QPD1015LEVB2 datasheet(1/27 Pages) QORVO

Il numero della parte	QPD1015LEVB2

Spiegazioni elettronici	65W, 50V, DC ??3.7 GHz, GaN RF Transistor

PDF	27 Pages

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Produttore elettronici	QORVO [Qorvo, Inc]

Homepage	https://www.qorvo.com/

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QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

Rev. C

- 1 of 27 -

Disclaimer: Subject to change without notice

www.qorvo.com

Product Features

• Frequency: DC to 3.7 GHz

• Output Power (P3dB)1: 70 W

• Linear Gain1: 20 dB

• Typical PAE3dB1: 74%

• Operating Voltage: 50 V

• Low thermal resistance package

• CW and Pulse capable

Note: 1 @ 2 GHz

General Description

The QPD1015L is a 65 W (P3dB) wideband unmatched

discrete GaN on SiC HEMT which operates from DC to

3.7 GHz with a 50V supply rail. The device is in an

industry standard air cavity package and is ideally suited

for military and civilian radar, land mobile and military

radio communications, avionics, and test

instrumentation. The device can support pulsed, CW, and

linear operation.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumenation

• Wideband or narrowband amplifiers

• Jammers

• Avionics

Ordering info

Part No.

ECCN

Description

QPD1015L

EAR99

DC – 3.7 GHz 65W RF

Transistor

QPD1015LPCB401

EAR99

0.96 – 1.215 GHz EVB

QPD1015LEVB2

EAR99

3.0 – 3.5 GHz EVB

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