UGE8HT, UGE8JT

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Vishay General Semiconductor

Revision: 19-Apr-16

3

Document Number: 87926

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Reverse Switching Characteristics

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.5

1.0

1.5

2.0

2.5

3.0

Instantaneous Forward Voltage (V)

0.01

0.1

10

100

1

T

Pulse Width = 300 μs

1 % Duty Cycle

60

40

20

0

100

80

10

100

1000

10 000

1

T

T

T

Percent of Rated Peak Reverse Voltage (%)

Reverse Voltage (V)

1

0.1

10

100

100

10

1

T

f = 1.0 MHz

V

0

300

350

250

150

200

50

100

25

50

75

100

125

150

Q

rr

T

rr

I

V

50 A/μs

240 A/μs

60 A/μs

50 A/μs

60 A/μs

240 A/μs

Junction Capacitance (°C)

TO-220AC

0.415 (10.54) MAX.

0.159 (4.04) DIA.

0.143 (3.64) DIA.

0.260 (6.6)

0.236 (6.0)

0.160 (4.06)

0.140 (3.56)

0.060 (1.50)

0.047 (1.20)

0.20 (5.08)

12

0.113 (2.87)

0.103 (2.62)

0.040 (0.84)

0.024 (0.62)

PIN 1

PIN 2

CASE

0.560 (14.22)

0.530 (13.46)

0.603 (15.32)

0.573 (14.55)

0.055 (1.39)

0.045 (1.14)

0.185 (4.70)

0.175 (4.44)

0.022 (0.56)

0.014 (0.36)