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RFSA3413 Scheda tecnica(PDF) 2 Page - Qorvo, Inc

Il numero della parte RFSA3413
Spiegazioni elettronici  5 MHz to 6000 MHz Digial Step Attenuator
PDF  14 Pages
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Produttore elettronici  QORVO [Qorvo, Inc]
Homepage  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

RFSA3413 Scheda tecnica(HTML) 2 Page - Qorvo, Inc

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RFSA3413
5 MHz to 6000 MHz Digital Step Attenuator
Datasheet March 5, 2019 | Subject to change without notice
2 of 14
www.qorvo.com
®
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Device Supply Voltage (VDD) (1)
+2.7
+5.5
V
Digital Logic High
+1.6
VDD
V
Digital Logic Low
-0.2
+0.9
Operating Temperature (2)
−40
+105
°C
Operating Junction Temperature
+125
°C
(1)
Device performance is constant over this range; LDO on chip
(2)
Derate RF Input Handing about 85°C
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−40 to +150 °C
RF Input Power at RFIN, TC=85°C
+30 dBm
RF Input Power at RFOUT, TC=85°C
+27 dBm
Device Supply Voltage (VDD)
-0.5 to +6 V
All Other DC and Logic Pins, VDD Appplied
Prior to Any Other Pin Voltages
-0.5 to +6 V
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical Specifications
Parameter
Conditions
 (1)
Min
Typ
Max
Units
Operational Frequency Range
5
6000
MHz
Insertion Loss
2000MHz, 0 dB attenuation
1.4
2.8
dB
Attenuation Range
1.0 dB step size
15
dB
Absolute Attenuation Error
0.2 ±4%
dB
Input IP3
+55
dBm
Input P0.1dB
+30
dBm
Input/Output Return Loss
15
dB
Input and Output Impedance
50
Ω
Attenuation Step Time
50% control signal level to 10% / 90% RF
120
nsec
Successive Step Phase Delta
2000MHz
2
Deg
Supply Current, IDD
Steady state, transient between states higher
180
300
μA
RF Input Power at RFIN
Continuous operation at +85°C case temperature
+27
dBm
RF Input Power at RFOUT
Continuous operation at +85°C case temperature
+20
dBm
Thermal Resistance, θjc
At maximum attenuation state with RF power
55
°C/W
Notes:
1. Test conditions unless otherwise noted: VDD = +5.0 V, Temp = +25 °C, 2000MHz, 50 Ω system.



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