2016 datasheet(1/5 Pages) TUOFENG

Il numero della parte	2016

Spiegazioni elettronici	N-Channel 20-V(D-S) MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Produttore elettronici	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Homepage	http://www.sztuofeng.com/?lang=en

Logo

1 / 5 page

Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

70

90

100

125

RθJL

63

80

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±

12

Gate-Source Voltage

Drain-Source Voltage

20

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

15

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

1.25

-55 to 150

ID

4.2

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

2016

V(BR)DSS

RDS(on)MAX

ID

20V

0.030Ω@ 4.5V

4.2 A

0.040Ω@ 2.5V

N-Channel 20-V(D-S) MOSFET

General FEATURE

APPLICATION

●

Load Switch for Portable Devices

●

DC/DC Converter

SOT-23

MARKING

Equivalent Circuit

1.GATE

2.SOURCE

3.DRAIN

*w：week code

w

1

2

3

●

TrenchFET Power MOSFET

●

Lead free product is acquired

●

Surface mount package

AE9TF

www.sztuofeng.com

Feb,2018 V1.0

1

2016

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2016 Scheda tecnica(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

2016 Scheda tecnica(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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