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4953 Scheda tecnica(PDF) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

Il numero della parte 4953
Spiegazioni elettronici  Dual P-Channel -30V(D-S) MOSFET
PDF  5 Pages
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Produttore elettronici  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Homepage  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4953 Scheda tecnica(HTML) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4953 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4953 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4953 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4953 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4953 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Dual 20V P-Channel PowerTrench®
® MOSFET
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8L
www.sztuofeng.com
Feb,2018 V1.0
4
Typical Characteristics
0
2
4
6
8
10
0
2
4
6
8
10
Q
g, GATE CHARGE (nC)
I
D = -5A
V
DS = -5V
-10V
-15V
0
100
200
300
400
500
600
700
800
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
µ s
R
DS(ON)
LIMIT
V
GS = -10V
SINGLE PULSE
Rθ
JA
= 135 oC/W
T
A = 25
oC
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
SINGLE PULSE
Rθ
JA
= 135°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4953



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