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8810B Scheda tecnica(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Il numero della parte 8810B
Spiegazioni elettronici  Dual N-Channel MOSFET
PDF  5 Pages
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Produttore elettronici  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Homepage  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

8810B Scheda tecnica(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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www.sztuofeng.com
Feb,2018 V1.0
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
1
V(BR)DSS
RDS(on)MAX
ID
20V
0.015 Ω @ 4.5V
6.0A
0.019 Ω @ 2.5V
MARKING
Equivalent Circuit
FEATURE
TrenchFET Power MOSFET
Excellent RDS(on)
Low Gate Charge
High Power and Current Handing Capability
Surface Mount Package
Dual N-Channel MOSFET
APPLICATION
Battery Protection
Load Switch
Power Management
ABSOLUTE MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
A
Pulsed Drain Current (note 1)
IDM
25
A
Thermal Resistance from Junction to Ambient (note 2)
RθJA
100
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
260
℃
V
6
Max
Y :year code W :week code
TSSOP-8 Plastic-Encapsulate MOSFETS
8810B
TFZYWJ
TSSOP-8
8810B
8810B


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