2009B datasheet(1/5 Pages) TUOFENG

Il numero della parte	2009B

Spiegazioni elettronici	Dual N-Channel MOSFET

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Produttore elettronici	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

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Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

1

V(BR)DSS

RDS(on)MAX

ID

20V

0.015Ω @ 4.5V

9.0A

0.018Ω @ 2.5V

MARKING

Equivalent Circuit

DFN-3x3-8L Plastic-Encapsulate MOSFETS

FEATURE

TrenchFET Power MOSFET

Excellent RDS(on)

Low Gate Charge

High Power and Current Handing Capability

Surface Mount Package

Dual N-Channel MOSFET

APPLICATION

Battery Protection

Load Switch

Power Management

DFN-3x3-8L

ABSOLUTE MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID

A

Pulsed Drain Current (note 1)

IDM

30

A

Thermal Resistance from Junction to Ambient (note 2)

RθJA

82

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

TL

260

℃

V

9

Max

Y :year code W :week code

2009B

S1

S2

G1

G2

D

S1

D

D1/D2

2009B

TFCYWP

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2009B Scheda tecnica(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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