8804 datasheet(2/5 Pages) TUOFENG

2 / 5 page

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Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

TSSOP-8 Plastic-Encapsulate MOSFETS

8804

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

µA

BVGSO

±12

VGS(th)

0.5

0.75

ID(ON)

11.5

15.4

22.2

gFS

VSD

0.73

2.4

Ciss

1810

Coss

232

Crss

200

1.6

Ω

17.9

Qgs

1.5

Qgd

4.7

tD(on)

2.5

7.2

tD(off)

10.8

trr

20.2

Qrr

8nC

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=8A

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IF=8A, dI/dt=100A/µs

Reverse Transfer Capacitance

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=10V, RL=1.2Ω,

RGEN=3Ω

Turn-On DelayTime

IF=8A, dI/dt=100A/µs

SWITCHING PARAMETERS

µA

VGS=4.5V, VDS=5V

VGS=4.5V, ID=5A

Gate-Body leakage current

Gate-Source Breakdown Voltage

VDS=0V, IG=±250uA

Gate Threshold Voltage

Ω

VDS=VGS ID=250µA

VDS=16V, VGS=0V

VDS=0V, VGS=±10V

VDS=5V, ID=8A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

IS=1A,VGS=0V

DYNAMIC PARAMETERS

VGS=0V, VDS=10V, f=1MHz

VGS=2.5V, ID=4A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

VGS=1.8V, ID=3A

Forward Transconductance

Diode Forward Voltage

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=4.5V, VDS=10V, ID=8A

Gate Source Charge

Gate Drain Charge

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev

4: Feb 2009

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