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S8205B Scheda tecnica(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Il numero della parte S8205B
Spiegazioni elettronici  Dual N-Channel MOSFET
PDF  6 Pages
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Produttore elettronici  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Homepage  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

S8205B Scheda tecnica(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =18V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
±50
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
0.
5
V
Drain-source on-resistance (note 3)
RDS(on)
VGS =4.5V, ID =5.0A
17
mΩ
VGS =2.5V, ID =4.5A
21
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =4.5A
10
S
Diode forward voltage (note 3)
VSD
IS=1.50A, VGS = 0V
1.0
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
VDS =10V , VGS =0V,f =1MHz
900
pF
Output Capacitance
Coss
220
pF
Reverse Transfer Capacitance
Crss
100
pF
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
td(on)
VDD=10V,VGS=4.5V,
ID=1A,RGEN= 6 Ω
10
ns
Turn-on rise time
tr
11
ns
Turn-off delay time
td(off)
35
ns
Turn-off fall time
tf
30
ns
Total Gate Charge
Qg
VDS =10V,VGS =4.5V,ID=6A
12
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
1.0
nC
Notes :
1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
1.0
S8205B
17
14
0.8
0.68
nA
500
nA
Dec,2018
V1.1
13
11



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